Product Summary

The IRFP264 HEXFET power MOSFET from international rectifier provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package of IRFP264 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. The IRFP264 also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Parametrics

IRFP264 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current,VGS @ 10V: 38 A; (2)ID@TC=100℃, continuous drain current,VGS @ 10V: 24 A; (3)IDM, pulsed drain current: 150 A; (4)PD@TC=25℃, power dissipation: 280 W; (5)linear dersting factor: 2.2 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 1000 mJ; (8)avalanche current: 38 A; (9)repetitive avalanche energy: 28 mJ; (10)peak diode recovery dv/dt: 4.8 V/ns; (11)junction and storage temperature range: -55 to +150 ℃; (12)soldering temperature, for 10 seconds: 300 ℃ (1.6mm from case).

Features

IRFP264 features: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)isolated central mounting hole; (4)fast switching; (5)east of paralleling; (6)simple drive requirements.

Diagrams

IRFP264 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFP264
IRFP264

Vishay/Siliconix

MOSFET N-Chan 250V 38 Amp

Data Sheet

0-331: $6.36
331-500: $5.83
500-1000: $5.60
IRFP264, SiHFP264
IRFP264, SiHFP264

Other


Data Sheet

Negotiable 
IRFP264PBF
IRFP264PBF

Vishay/Siliconix

MOSFET N-Chan 250V 38 Amp

Data Sheet

0-1: $2.53
1-10: $2.03
10-100: $1.85
100-250: $1.67
IRFP264N
IRFP264N

Vishay/Siliconix

MOSFET N-Chan 250V 44 Amp

Data Sheet

Negotiable 
IRFP264NPBF
IRFP264NPBF

Vishay/Siliconix

MOSFET N-Chan 250V 44 Amp

Data Sheet

Negotiable 
IRFP264N, SiHFP264N
IRFP264N, SiHFP264N

Other


Data Sheet

Negotiable