(China (Mainland))
Product Summary
The EL6915CL-T7 is a NPN silicon germanium RF transistor.
Parametrics
EL6915CL-T7 maximum ratings: (1)Collector-emitter voltage VCEO: 2.3 V; (2)Collector-emitter voltage VCES: 7.5; (3)Collector-base voltage VCBO: 7.5; (4)Emitter-base voltage VEBO: 1.2; (5)Collector current IC: 80 mA; (6)Base current IB: 3 mA; (7)Total power dissipation TS ≤ 95℃: Ptot 185 mW; (8)Junction temperature Tj: 150 ℃; (9)Ambient temperature TA: -65 to 150 ℃; (10)Storage temperature Tstg: -65 to 150 ℃.
Features
EL6915CL-T7 features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.7 dB at 1.8 GHz; (5)Outstanding noise figure F = 1.3 dB at 6 GHz; (6)Maximum stable gain. Gms = 21.5 dB at 1.8 GHz. Gma = 11 dB at 6 GHz; (7)Gold metallization for extra high reliability.
Diagrams
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