(China (Mainland))
Product Summary
The SI2301DS-T1 is a P-Channel 1.25-W, 2.5-V MOSFET.
Parametrics
SI2301DS-T1 absolute maximum ratings: (1)Drain-Source Voltage VDS: -20V; (2)Gate-Source Voltage VGS: ±8V; (3)Continuous Drain Current (TJ = 150℃)b ID: TA= 25℃ -2.3V; TA= 70℃ -1.5A; (4)Pulsed Drain Currenta IDM: -10A; (5)Continuous Source Current (Diode Conduction)b IS: -1.6A; (6)Operating Junction and Storage Temperature Range TJ, Tstg:-55 to 150 ℃; (7)Power Dissipationb PD: TA= 25℃ 1.25 w; TA= 70℃ 0.8W.
Features
SI2301DS-T1 features: (1)VDS (V): -20; (2) rDS(on)(Ω): 0.130 @ VGS = - 4.5 V; 0.190 @ VGS = - 2.5 V; (3)ID (A): -2.3; -1.9.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI2301DS-T1 |
Vishay/Siliconix |
MOSFET 20V 2.3A 1.25W |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
SI2300 |
Other |
|
Data Sheet |
Negotiable |
|
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 |
SI2300DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 3.6A N-CH MOSFET |
Data Sheet |
|
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|
SI2301 |
Micro Commercial Components (MCC) |
MOSFET -20V -2.8A |
Data Sheet |
|
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|
Si2301ADS |
Other |
|
Data Sheet |
Negotiable |
|
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|
SI2301ADS-T1 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
|
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|
SI2301ADS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
|
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