(China (Mainland))
Product Summary
The TMS4416-12NL is a high-speed, 65536-bit dynamic, random-access memory, organized as 16384 words of 4 bits each. The TMS4416-12NL employs state-of-the-art SMOS N-chanel double-level polysillicon gate technology for very high performance combined with low cost and improved reliability. The TMS4416-12NL features RAS access times to 120ns maximum. Power dissipation is 200mW typical operating, 17.5mW typical standby.
Parametrics
TMS4416-12NL absolute maximum ratings: (1)voltage on any pin except VDD and data out: -1.5 to 10V; (2)voltage on VDD supply and data out with respect to VSS: -1 to 6V; (3)short circuit output current: 50mA; (4)power dissipation: 1W; (5)operating free-air temeprature range: 0 to 70℃; (6)operating case temperature range: -55 to 100℃; (7)storage temeprature range: -65 to 150℃.
Features
TMS4416-12NL features: (1)16384×4 organization; (2)single +5V supply; (3)long refresh period: 4 milliseconds; (4)low refresh overhaead time: as low as 1.7% of total refresh period; (5)all inputs,outputs, clocks fully TTL compatible; (6)3-state unlatched outputs; (7)early write or G to control output buffer impedance; (8)page-mode operation for faster access; (9)low power dissipation; (10)new SMOS N-channel technology.
Diagrams
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