Product Summary

The M5M4256AP is a dynamic RAM. The M5M4256AP is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singel transistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs of the M5M4256AP permit both a reduction on pins to the 18-pin plastic lead chip carrier configuration and an increase in system densities. The M5M4256AP is suitable for main memory unit for computers, microcomputer.

Parametrics

M5M4256AP absolute maximum ratings: (1)VCC, supply votage: -1 to 7V when with respect to VSS; (2)VI, input voltage: -1 to 7V when with respect to VSS; (3)VO, output voltage: -1 to 7V when with respect to VSS; (4)IO, output current: 50mA; (5)Pd, power dissipation: 1000mW when Ta=25℃; (6)Topr, operating temperature: 0 to 70℃; (7)Tstg, storage temeprature: -65 to 150℃.

Features

M5M4256AP features: (1)standard 16 pin DIP, 18 pin PLCC, 16 pin ZIP; (2)singe 5V±10% supply; (3)low standby power dissipation: 25mW max; (4)low operating power dissipation; (5)unlatched output enables two-dimensional chip selection and extended page boundary; (6)early-write operation gives common I/O capability; (7)read-modify-write, RAS-only-refresh, page-mode capabilities; (8)CAS before RAS refresh mode capability; (9)all input terminals have low input capacitance and are directly TTL-compatible; (10)output is three-state and directly TTL-compatible; (11)256 refresh cycles every 4ms; (12)CAS controlled output allows hidden refresh.

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