Product Summary

The BAS116-E6327 is a Silicon Low Leakage Diode.

Parametrics

BAS116-E6327 maximum ratings: (1)Diode reverse voltage VR 80 V; (2)Peak reverse voltage VRM: 85 mA; (3)Forward current IF: 250 mA; (4)Non-repetitive peak surge forward current IFSM: when t = 1 μs 4.5A; when t=1s 0.5A; (5)Total power dissipation TS ≤ 54℃ Ptot: 370 mW; (6)Junction temperature Tj: 150 ℃; (7)Storage temperature Tstg: -65 to 150 ℃.

Features

BAS116-E6327 features: (1)Low-leakage applications; (2)Medium speed switching times; (3)Pb-free (RoHS compliant) package1); (4)Qualified according AEC Q101.

Diagrams

BAS116-E6327 Test circuit for reverse recovery time

BAS101,215
BAS101,215

NXP Semiconductors

Diodes (General Purpose, Power, Switching) Diode Switching 300V 0.2A 3-Pin

Data Sheet

0-1: $0.05
1-25: $0.05
25-100: $0.05
100-250: $0.04
BAS101S,215
BAS101S,215

NXP Semiconductors

Diodes (General Purpose, Power, Switching) Diode Switching 600V 0.1A 3-Pin

Data Sheet

0-1: $0.05
1-25: $0.05
25-100: $0.05
100-250: $0.04
BAS11
BAS11

Other


Data Sheet

Negotiable 
BAS116
BAS116

Taiwan Semiconductor

Diodes (General Purpose, Power, Switching) Switching diode 225 mW

Data Sheet

0-3000: $0.01
3000-6000: $0.01
BAS116,215
BAS116,215

NXP Semiconductors

Rectifiers 85V 215mA

Data Sheet

0-1: $0.03
1-25: $0.02
25-100: $0.02
100-250: $0.02
BAS116,235
BAS116,235

NXP Semiconductors

Rectifiers DIODE LOW LEAKAGE TAPE-11

Data Sheet

0-1: $0.05
1-25: $0.04
25-100: $0.04
100-250: $0.04