(China (Mainland))
Product Summary
The 2SK1169 is a Silicon N-Channel MOS FET. The applications of the 2SK1169 include High speed power switching.
Parametrics
2SK1169 absolute maximum ratings: (1)Drain to source voltage: 450 V; (2)Gate to source voltage: ±30 V; (3)Drain current: 20 A; (4)Drain peak current ID(pulse): 80 A; (5)Body to drain diode reverse drain current: 20 A; (6)Channel dissipation Pch: 120 W; (7)Channel temperature: 150 ℃; (8)Storage temperature: –55 to +150 ℃.
Features
2SK1169 features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)No secondary breakdown; (5)Suitable for switching regulator and DC-DC converter.
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SK1169 |
Other |
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Data Sheet |
Negotiable |
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2SK1056 |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
Negotiable |
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Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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Other |
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Data Sheet |
Negotiable |
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2SK1062 |
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Data Sheet |
Negotiable |
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