(China (Mainland))
Product Summary
The 2SK1062 is a TISHIBA field effect transistor Silicon N channel MOS type. The applications of the 2SK1062 are: High speed switching application. Analog switching application. Interface applications.
Parametrics
2SK1062 maximum ratings: (1)Drain-source voltage, VDS: 60V; (2)Gates-source, VGSS: ±20V; (3)Drain current, DC, ID: 200mA; (4)Pluse, IDP: 800mA; (5)Drain power dissipation, PD: 200mW; (6)Channel temperature, Tch: 150℃; (7)Storage temperature range, Tstg: -55 to 150℃.
Features
2SK1062 features: (1)Excellent switching: ton=15ns; (2)High forward transfer admittcance: |Yfs|=100mS min, @ID=50mA; (3)Low on resistance: RDS(ON)=0.6Ω(TYP.)@ID=50mA; (4)Enhancement-mode; (5)Complementary to 2SJ168.
Diagrams
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 2SK1062 |
Other |
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Data Sheet |
Negotiable |
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2SK1056 |
Other |
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Negotiable |
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2SK1057 |
Other |
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Data Sheet |
Negotiable |
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2SK1058 |
Other |
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Data Sheet |
Negotiable |
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2SK1058-E |
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MOSFET N-CH 160V 7A TO-3P |
Data Sheet |
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2SK1061 |
Other |
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Data Sheet |
Negotiable |
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2SK1062 |
Other |
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Data Sheet |
Negotiable |
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