(China (Mainland))
Product Summary
The 2N2369AJANTX is a NPN silicon switching transistor.
Parametrics
2N2369AJANTX absolute maximum ratings: (1)Collector-Emitter Voltage:15Vdc; (2)Emitter-Base Voltage:4.5Vdc; (3)Collector-Base Voltage:40Vdc; (4)Collector-Emitter Voltage:40Vdc; (5)Operating & Storage Junction Temperature Range:-65℃ to +200℃.
Features
2N2369AJANTX features: (1)Thermal Resistance, Junction-to-Case:146℃/mW; (2)Thermal Resistance, Ambient-to-Case:325℃/mW; (3)Collector-Emitter Breakdown Voltage, IC = 10 mAdc:15Vdc; (4)Collector-Emitter Cutoff Current, VCE = 20 Vdc:0.4μAdc; (5)Emitter-Base Breakdown Voltage, VEB = 4.5 Vdc:10μAdc; (6)Emitter-Base Cutoff Current, VEB = 4.0 Vdc:0.25μAdc; (7)Collector-Base Breakdown Voltage, VCB = 40 Vdc:10μAdc; (8)Collector-Base Cutoff Current, VCB = 32 Vdc:0.2μAdc.
Diagrams
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 2N2323 |
Other |
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Data Sheet |
Negotiable |
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2N2323A |
Other |
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Data Sheet |
Negotiable |
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2N2328 |
Other |
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Data Sheet |
Negotiable |
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2N2328S |
Other |
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Data Sheet |
Negotiable |
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2N2329 |
Other |
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Data Sheet |
Negotiable |
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2N2369A |
Central Semiconductor |
Transistors Bipolar (BJT) NPN Fast SW SS |
Data Sheet |
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