1SS226

silicon epitaxial planar, SC-59, 0.9pF

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Price:: US $0.01~0.03 / piece [Get Latest Price]

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	US $0.01~0.03

PartNumber:: 1SS226

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-13

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Part Number:1SS226
US $0.01 - 0.03
ECA1HHG220

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TMS320C6414TBGLZA7

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Product Summary

The 1SS226 is a silicon epitaxial planar type of Toshiba diode. It is widely used in ultra high speed switching application.

Parametrics

1SS226 maximum ratings: (1)Maximum (peak) reverse voltage: 85 V; (2)Reverse voltage: 80 V; (3)Maximum (peak) forward current: 300 mA; (4)Average forward current: 100 mA; (5)Surge current (10ms): 2)A; (6)Power dissipation: 150 mW; (7)Junction temperature: 125 ℃; (8)Storage temperature range: 55~125 ℃.

Features

1SS226 features: (1)Small package : SC-59; (2)Low forward voltage : VF (3) = 0.9V (typ.); (3)Fast reverse recovery time : trr = 1.6ns (typ.); (4)Small total capacitance : CT = 0.9pF (typ.).